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ZXTP2008Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 30V PNP LOW SATURATION MEDUIM POWER TRANSISTOR IN SOT89
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ZXTP2008Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCER
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Collector cut-off current
ICER
R <1k⍀
Emitter cut-off current
IEBO
Collector-emitter saturation voltage VCE(SAT)
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
VBE(SAT)
VBE(ON)
hFE
Transition frequency
fT
-50 -70
-50 -70
-30 -40
-7.0 -8.0
<-1
<-1
<-1
-25
-35
-55
-55
-130
-970
-860
100 225
100 200
70 145
10
20
110
-20
-0.5
-20
-0.5
-10
-40
-55
-80
-80
-175
-1070
-960
300
V
V
V
V
nA
␮A
nA
␮A
nA
mV
mV
mV
mV
mV
mV
mV
MHz
IC = -100␮A
IC = -1␮A, RB <1k⍀
IC = -10mA *
IE = -100␮A
VCB = -40V
VCB = -40V,Tamb =100°C
VCB = -40V
VCB = -40V,Tamb =100°C
VEB = -6V
IC = -0.5A, IB = -20mA *
IC = -1A, IB = -100mA *
IC = -1A, IB = -20mA *
IC = -2A, IB = -200mA *
IC = -5.5A, IB =-500mA *
IC = -5.5A, IB = -500mA *
IC = -5.5A, VCE = -1V *
IC = -10mA, VCE = -1V *
IC = -1A, VCE = -1V *
IC = -5A, VCE = -1V *
IC = -20A, VCE = -1V *
IC = -100mA, VCE = -10V
f = 50MHz
Output capacitance
Switching times
COBO
tON
tOFF
83
pF VCB = -10V, f = 1MHz *
43
ns IC = -1A, VCC = -10V,
230
IB1 = -IB2 = -100mA
NOTES
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
ISSUE 1 - JUNE 2005
4
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