ZXTP2008G_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 30V PNP LOW SATURATION TRANSISTOR

ZXTP2008G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol Min
BVCBO
-50
BVCER
-50
BVCEO
-30
BVEBO
-7
—
ICBO
—
ICER
—
R≤1kΩ
—
IEBO
—
VCE(SAT)
—
VBE(SAT)
—
VBE(ON)
—
100
hFE
100
70
10
Typ
-70
-70
-40
-8
< -1
—
< -1
—
< -1
-30
-40
-60
-70
-170
-1.03
-0.9
225
200
145
20
Transition Frequency
fT
—
110
Output Capacitance (Note 9)
Switching Times
COBO
—
83
tON
—
43
tOFF
—
230
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
—
-20
-0.5
-20
-0.5
-10
-45
-60
-85
-90
-210
-1.13
-1
300
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
V
V
—
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
IE = -100µA
VCB = -40V
VCB = -40V, TA = +100°C
VCB = -40V
VCB = -40V, TA = +100°C
VEB = -6V
IC = -0.5A, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, IB = -20mA
IC = -2A, IB = -200mA
IC = -5.5A, IB = -500mA
IC = -5.5A, IB = -500mA
IC = -5.5A, VCE = -1V
IC = -10mA, VCE = -1V
IC = -1A, VCE = -1V
IC = -5A, VCE = -1V
IC = -20A, VCE = -1V
VCE = -10V, IC = -100mA,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -1A,
IB1 = -IB2 = 100mA
ZXTP2008G
Document number: DS33708 Rev. 2 - 2
4 of 7
www.diodes.com
December 2015
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