ZXTP2006E6_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

ZXTP2006E6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min
BVCBO
-25
BVCEO
-20
BVEBO
-7.5
ICBO

IEBO

ICES

300
300
hFE
150
10

VCE(sat)


VBE(sat)

VBE(on)

fT

Cobo

Note: 9. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
Typ
-49
-43
-8.4



575
450
285
40
-10
-100
-110
-0.96
-0.8
110
45
Max



-100
-100
-100

900


-15
-140
-130
-1.1
-0.9


Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
nA V_CB = -20V
nA V_EB = -6V
nA V_CES = -20V
 IC = -10mA, VCE = -2V
 IC = -1A, VCE = -2V
 IC = -3.5A, VCE = -2V
 IC = -10A, VCE = -2V
IC = -100mA, IB = -10mA
mV I_C = -1A, I_B = -10mA
IC = -3.5A, IB = -350mA
V I_C = -3.5A, I_B = -350mA
V I_C = -3.5A, V_CE = -2V
MHz V_CE = -10V, I_C = -50mA, f = 50MHz
pF V_CB = -10V, f = 1MHz
ZXTP2006E6
Document Number: DS33707 Rev: 2 - 2
4 of 7
www.diodes.com
October 2015
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