ZXTP2006E6_15 Datasheet, PDF (4/8 Pages) Diodes Incorporated – 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6

ZXTP2006E6
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CES
I_EBO
V_CE(SAT)
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V_BE(SAT)
V_BE(ON)
h_FE
Transition frequency
f_T
-25 -49
V I_C = -100␮A
-20 -43
V I_C = -10mA *
-7.5 -8.4
V I_E = -100␮A
-100 nA V_CB = -20V
-100 nA V_CB = -20V
-100 nA V_EB = -6V
-10
-100
-110
-15
-140
-130
mV I_C = -0.1A, I_B = -10mA*
mV I_C = -1A, I_B = -10mA*
mV I_C = -3.5A, I_B = -350mA*
-0.96 -1.1 V I_C = -3.5A, I_B = -350mA*
-0.8 -0.9 V I_C = -3.5A, V_CE = -2V *
300 575
300 450 900
150 285
10
40
I_C = -10mA, V_CE = -2V *
I_C = -1A, V_CE = -2V *
I_C = -3.5A, V_CE = -2V *
I_C = -10A, V_CE = -2V *
110
I_C = -50mA, V_CE = -10V
f = 50MHz
Output capacitance
C_OBO
45
pF V_CB = -10V, f = 1MHz *
NOTES
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.
ISSUE 1 - JUNE 2005
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