ZXTP19100CG_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER TRANSISTOR

ZXTP19100CG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Base Breakdown Voltage
(forward blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Symbol
BVCBO
BVCEO
BVCEX
BVECX
BVECO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
Min
-110
-100
-110
-7
Typ
-135
-135
-130
-8.3
-7
-8.7
-7
-8.3

< 1



<1

-100
 -100
 -180
 -220

-890

-840
200 300
70
130
20
28
Current Gain-Bandwidth Product (Note 11)
fT

142
Input Capacitance (Note 11)
Output Capacitance (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Cibo

Cobo

td

tr

ts

tf

Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
291
23.5
24.7
22.4
660
107
Max






-50
-0.5
-50
-130
-125
-230
-295
-1,000
-950
500



400
40




Unit
V
V
V
V
V
nA
µA
nA
mV
mV
mV
mV
mV
mV



MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IC = -100µA
IC = -100µA, RBC <1kΩ or
0.25V< VBC > -0.25V
IE = -100µA
IE = -100µA
VCB = -110V
VCB = -110V, TA = +100°C
VEB = -5.6V
IC = -500mA, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
IC = -2A, IB = -200mA
IC = -2A, IB = -200mA
IC = -2A, VCE = -2V
IC = -100mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
VCE = -10V, IC = -100mA,
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
Rb = 100W, Rc = 20W
ZXTP19100CG
Document Number DS33738 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated