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| ZXTP19020DZ_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP HIGH GAIN TRANSISTOR IN SOT89 | |||
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A Product Line of
Diodes Incorporated
ZXTP19020DZ
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Notes 9)
Emitter-Collector breakdown voltage
(reverse blocking)
Emitter-Collector breakdown voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC current transfer Static ratio (Notes 9)
Symbol
BVCBO
BVCEO
BVECX
BVECO
BVEBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage (Notes 9)
Base-Emitter Saturation Voltage (Notes 9)
Base-Emitter Turn-on Voltage (Notes 9)
VCE(sat)
VBE(sat)
VBE(on)
Min
Typ.
-25
-55
-20
-50
-4
-8.6
-4
-8.6
-7
-8.2
-
< -1
-
-
-
< -1
300
450
200
290
65
110
-
25
-
-40
-
-100
-
-115
-
-225
-
-1000
-
-865
Transitional Frequency (Notes 9)
fT
-
176
Input Capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
Cibo
-
Cobo
-
td
-
tr
-
ts
-
tf
-
Notes: 9. Measured under pulsed conditions. Pulse width ⤠300μs. Duty cycle â¤2%.
-
36
23
18.4
266
49.6
Max
-
-
-
-
-
-50
-500
-50
900
-
-
-
-47
-130
-145
-275
-1100
-1000
-
400
45
-
-
-
-
Unit
V
V
V
V
V
nA
nA
-
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA, RBC < 1k⦠or
0.25V > VBC > -0.25V
IE = -100µA
IE = -100µA
VCB = -25V
VCB = -25V, TA = 100°C
VEB = -5.6V
IC = -100mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
IC = -15A, VCE = -2V
IC = -1A, IB = -100mA
IC = -1A, IB = -10mA
IC = -2A, IB = -40mA
IC = -6A, IB = -300mA
IC = -6A, IB = -300mA
IC = -6A, VCE = -2V
IC = -50mA, VCE = -10V,
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -1A,
IB1 = -IB2 =-50mA
ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
4 of 7
www.diodes.com
November 2011
© Diodes Incorporated
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