ZXTP19020DG_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP HIGH GAIN TRANSISTOR IN SOT223

A Product Line of
Diodes Incorporated
ZXTP19020DG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Symbol
BVCBO
BVCEO
BVECX
BVECO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
Min Typ
-25
-55
-20
-50
-4
-8.6
-4
-8.6
-7
-8.2

< 1



<1

-40

-97
 -115
 -220
 -1050

-930
300 450
200 290
45
70

25
Current Gain-Bandwidth Product (Note 11)
fT

Input Capacitance (Note 11)
Output Capacitance (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Cibo

Cobo

td

tr

ts

tf

Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
176

36
23
18.4
266
49.6
Max





-50
-0.5
-50
-47
-130
-145
-275
-1150
-1000
900




400
45




Unit
V
V
V
V
V
nA
µA
nA
mV
mV
mV
mV
mV
mV




MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IC = -100µA, RBC <1kΩor
0.25V< VBC > -0.25V
IE = -100µA
IE = -100µA
VCB = -25V
VCB = -25V, TA = +100°C
VEB = -5.6V
IC = -1A, IB = -100mA
IC = -1A, IB = -10mA
IC = -2A, IB = -40mA
IC = -8A, IB = -800mA
IC = -8A, IB = -800mA
IC = -8A, VCE = -2V
IC = -100mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -8A, VCE = -2V
IC = -15A, VCE = -2V
VCE = -10V, IC = -50mA,
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
IC = -1A, VCC = -10V,
IB1 = -IB2 = -50mA
ZXTP19020DG
Document Number DS33732 Rev. 2 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated