ZXTP19020DFF Datasheet, PDF (4/8 Pages) Diodes Incorporated – 20V, SOT23F, PNP medium power transistor

ZXTP19020DFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_ECX
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector-base cut-off current
BV_ECO
BV_EBO
I_CBO
Min.
-25
-20
-4
-4
-7
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Typ.
-55
Max.
Unit Conditions
V I_C = -100␮A
-50
V _{IC = -10mA} ^(*)
-8.6
V I_E = -100␮A, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
-8.6
V I_E = -100␮A
-8.2
V I_E = -100␮A
<-1
<-1
-37
-90
-105
-160
-145
-975
-50
-0.5
-50
-44
-125
-140
-210
-175
-1050
nA V_CB = -25V
␮A _{VCB = -25V, Tamb= 100°C}
nA V_EB = -5.6V
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -10mA}^(*)
mV _{IC = -2A, IB = -40mA}^(*)
mV _{IC = -5A, IB = -250mA}^(*)
mV _{IC = -5.5A, IB = -550mA}^(*)
mV _{IC = -5.5A, IB = -550mA}^(*)
Base-emitter turn-on voltage V_BE(on)
Static forward current
transfer ratio
h_FE
300
200
85
25
Transition frequency
f_T
-830
450
310
130
50
20
176
-900
900
mV
MHz
I_C = -5.5A, V_CE = -2V^(*)
I_C = -100mA, V_CE = -2V^(*)
I_C = -2A, V_CE = -2V^(*)
I_C = -5.5A, V_CE = -2V^(*)
I_C = -10A, V_CE = -2V^(*)
I_C = -15A, V_CE = -2V^(*)
I_C = -50mA, V_CE = -10V
f = 50MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
400
36
45
23
18.4
266
49.6
pF _{VEB = -0.5V, f = 1MHz}^(*)
pF _{VCB = -10V, f = 1MHz}^(*)
ns I_C = -1A, V_CC = -10V
ns ^IB1 ^{= -I}B2^{= -50mA.}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - September 2007
4
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