ZXTP19020CFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23F, PNP medium power transistor

ZXTP19020CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown
voltage (base open)
BV_CEO
Emitter-base breakdown voltage BV_EBO
Emitter-collector breakdown
voltage (reverse blocking)
BV_ECX
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
BV_ECO
I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
f_T
Min.
-25
-20
-7
-6
-5
200
170
110
Typ. Max. Unit Conditions
-45
V I_C = -100␮A
-30
V _{IC = -10mA} ^(*)
-8.3
V I_E = -100␮A
-8.3
V I_E = -100␮A, R_BC Յ1k⍀ or
0.25V < V_BC < -0.25V
-8.5
V I_E = -100␮A,
<-1
<-1
-30
-50
-75
-105
-925
-815
350
300
180
200
-50
-20
-50
-40
-70
-120
-135
-1050
-950
500
nA V_CB = -20V
␮A V_CB = -20V, T_amb= 100°C
nA V_EB = -5.6V
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -20mA}^(*)
mV _{IC = -2A, IB = -40mA}^(*)
mV _{IC = -5A, IB = -500mA}^(*)
mV _{IC = -5A, IB = -500mA}^(*)
mV _{IC = -5A, VCE = -2V}^(*)
I_C = -100mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -5A, V_CE = -2V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_obo
t_d
t_r
t_s
t_f
52 70
66.8
74.9
226
85.5
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -15V.
ns ^{IC = -750mA,}
ns ^{IB1 = 15mA, IB2= -15mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - February 2007
4
© Zetex Semiconductors plc 2007
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