ZXTP08400BFF_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F

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ZXTP08400BFF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol
BVCBO
BVCEO
BVEBO
BVECX
BVECO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min Typ
-400
-400
-7
-6
-500
-480
-8.1
-8.2
-6
-8.6
—
<-1
—
—
<-1
100 220
100 200
100 200
-10
—
-95
-140
-140
—
-810
—
-705
Transition Frequency
fT
50
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
—
td
—
tr
—
ts
—
tf
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
70
12.9
95
73.8
1790
153.8
Max
—
—
—
—
—
-50
-20
-50
—
300
—
-145
-125
-220
-190
-900
-800
—
20
—
—
—
—
Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
V
IE = -100µA; RBC < 1kΩ or
0.25V < VBC < -0.25V
V I_E = -100µA
nA VCB = -320V
µA _{VCB = -320V, TA = +100°C}
nA V_EB = -5.6V
IC = -1mA, VCE = -5V
— I_C = -50mA, V_CE = -5V
IC = -200mA, VCE = -10V
IC = -20mA, IB = -1mA
mV ^{IC = -50mA, IB = -5mA}
IC = -100mA, IB = -10mA
IC = -200mA, IB = -40mA
mV I_C = -200mA, I_B = -40mA
mV I_C = -200mA, V_CE = -10V
MHz
pF
ns
ns
ns
ns
IC = -20mA, VCE = -20V,
f = 20MHz
VCB = -20V, f = 1MHz
VCC = -100V,
IC = -100mA,
IB1 = IB2 = -20mA
ZXTP08400BFF
Document number: DS33674 Rev. 3 - 2
4 of 7
www.diodes.com
September 2014
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