ZXTP08400BFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 400V, SOT23F, PNP medium power high voltage transistor

ZXTP08400BFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECX
Emitter-collector breakdown BV_ECO
voltage (base open)
Collector-base cut-off current I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_obo
t_d
t_r
t_s
t_f
Min. Typ. Max. Unit Conditions
-400 -500
V I_C = -100␮A
-400 -480
-7 -8.1
V _{IC = -10mA} ^(*)
V I_E = -100␮A
-6 -8.2
-6 -8.6
V I_E = -100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = -100␮A,
<-1 -50
-20
<-1 -50
-10 -145
-95 -125
-140 -220
-140 -190
-810 -900
nA V_CB = -320V
␮A _{VCB = -320V, Tamb= 100°C}
nA V_EB = -5.6V
mV _{IC = -20mA, IB = -1mA}^(*)
mV _{IC = -50mA, IB = -5mA}^(*)
mV _{IC = -100mA, IB = -10mA}^(*)
mV _{IC = -200mA, IB = -40mA}^(*)
mV _{IC = -200mA, IB = -40mA}^(*)
-705 -800 mV _{IC = -200mA, VCE = -10V}^(*)
100 220
I_C = -1mA, V_CE = -5V^(*)
100 200 300
I_C = -50mA, V_CE = -5V^(*)
100 200
I_C = -200mA, V_CE = -10V^(*)
50 70
MHz I_C = -20mA, V_CE = -20V
f = 20MHz
12.9 20
95
73.8
1790
pF _{VCB = -20V, f = 1MHz}^(*)
ns V_CC = -100V.
ns ^{IC = -100mA,}
ns ^{IB1 = 10mA, IB2= -20mA.}
153.8
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 2 - August 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com