ZXTN618MA_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V NPN LOW SATURATION TRANSISTOR

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Diodes Incorporated
ZXTN618MA
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 6)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
I_CES
h_FE
Min Typ Max
40
100
-
20
27
-
7
8.2
-
-
-
100
-
-
100
-
-
100
200 400
-
300 450
-
200 360
-
100 180
-
Collector-Emitter Saturation Voltage (Note 6)
-
-
V_CE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
V_BE(on)
-
V_BE(sat)
-
C_obo
-
Transition Frequency
f_T
100
Turn-On Time
Turn-Off Time
t_on
-
t_off
-
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
8
90
115
190
210
0.88
0.98
23
140
170
400
15
150
135
250
300
0.97
1.07
30
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = 100 µA
I_C = 10 mA
I_E = 100 µA
V_CB = 30V
V_EB = 6V
V_CES = 16V
I_C = 10mA, V_CE = 2V
I_C = 200mA, V_CE = 2V
I_C = 2A, V_CE = 2V
I_C = 6A, V_CE = 2V
I_C =0.1A, I_B = 10mA
I_C = 1A, I_B = 10mA
I_C = 2A, I_B = 50mA
I_C =3A, I_B = 100mA
I_C =4.5A, I_B = 125mA
I_C = 4.5A, V_CE = 2V
I_C = 4.5A, I_B = 125mA
V_CB = 10V. f = 1MHz
V_CE = 10V, I_C = 50mA,
f = 100MHz
V_CC = 10V, I_C = 3A
I_B1 = I_B2 = 10mA
ZXTN618MA
Document Number DS31890 Rev. 5 – 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated