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ZXTN617MA_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 15V NPN LOW SATURATION TRANSISTOR
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Diodes Incorporated
ZXTN617MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 6)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ Max
40
70
-
15
18
-
7
8.2
-
-
-
100
-
-
100
-
-
100
200 415
-
300 450
-
200 320
-
150 240
-
-
80
-
Collector-Emitter Saturation Voltage (Note 6)
-
-
VCE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
80
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
8
14
70
100
165 200
240 310
200
-
0.88 0.96
0.94 1.05
30
40
120
-
120
-
160
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100 µA
IC = 10 mA
IE = 100 µA
VCB = 30V
VEB = 6V
VCES = 12V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 12A, VCE = 2V
IC =0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 3A, IB = 50mA
IC =4.5A, IB = 50mA
IC =4.5A, IB = 100mA
IC = 4.5A, VCE = 2V
IC = 4.5A, IB = 50mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
ZXTN617MA
Document number: DS31888 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
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