ZXTN4004Z_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 150V NPN LED DRIVING TRANSISTOR IN SOT89

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ZXTN4004Z
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Static Forward Current Transfer Ratio (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Symbol
BVCEO
BVCBO
ICBO
ICES
IEBO
hFE
VBE(on)
VCE(sat)
t(d)
t(r)
t(s)
t(f)
t(s)
t(f)
Min Typ
150 175
200 310
-
<1
-
<1
-
<1
200
-
60
-
100
-
-
0.71
-
-
-
512
-
426
-
3413
-
321
-
65
-
294
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
-
-
50
50
50
-
-
-
0.95
0.25
-
-
-
-
-
-
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Unit
V
V
nA
nA
nA
-
V
V
ns
ns
ns
ns
ns
ns
Test Condition
IC = 10mA
IC = 100µA
VCB = 150V
VCE = 150V
VEB = 7V
IC = 30mA, VCE = 5V
IC = 85mA, VCE = 0.20V
IC = 150mA, VCE = 0.25V
IC = 150mA, VCE = 0.25V
IC = 100mA, IB = 5mA
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 0.25V
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 4V
700 ^125°C
V =0.25V
CE
600
85°C
500
400 _25°C
300
200 -55°C
100
0
100µ
1m
10m
100m
1
I Collector Current (A)
C
h vI
FE C
1.0
V =0.25V
CE
0.8
25°C
-55°C
0.6
0.4
125°C
0.2
100µ
30
25
85°C
1m
10m
100m
1
I Collector Current (A)
C
V vI
BE(on) C
f = 1MHz
20
15
10
Cobo
5
0
100m
1
10
100
Voltage(V)
Capacitance v Voltage
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
4 of 6
www.diodes.com
May 2015
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