ZXTN4004K_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 150V NPN LED DRIVING TRANSISTOR IN TO252

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Diodes Incorporated
ZXTN4004K
Electrical Characteristics (@TA = +25°C unless otherwise specified
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage (Note 9)
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage (Note 9)
Collector – Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
BVCBO
150
BVCEO
150
BVEBO
7
ICES
-
ICBO
-
IEBO
-
hFE
60
100
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-
Delay Time
t(d)
-
Rise Time
t(r)
-
Storage Time
t(s)
-
Fall Time
t(f)
-
Storage Time
t(s)
-
Fall Time
t(f)
-
Note:
9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
Typ
-
175
-
-
-
-
-
-
-
-
0.71
512
426
3413
321
65
294
Max
-
-
-
50
50
50
-
-
0.25
0.95
0.95
-
-
-
-
-
-
Unit
V
V
V
nA
nA
nA
-
V
V
V
ns
ns
ns
ns
ns
ns
Test Condition
IC = 0.1mA
IC = 10mA
IE = 0.1mA
VCE = 150V
VCB = 150V
VEB = 7V
IC = 85mA, VCE = 0.20V
IC = 150mA, VCE = 0.25V
IC = 100mA, IB = 5mA
IC = 100mA, IB = 5mA
IC = 150mA, VCE = 0.25V
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 0.25V
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 4V
ZXTN4004K
Document Number: DS35458 Rev: 4 - 2
4 of 7
www.diodes.com
December 2014
© Diodes Incorporated