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ZXTN26070CV_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 70V NPN LOW SATURATION TRANSISTOR IN SOT-666
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Diodes Incorporated
ZXTN26070CV
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain
Symbol
Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO, ICES
IEBO
150
70
7
−
−
190
hFE
200
75
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
−
−
VCE(SAT)
−
−
−
VBE(ON)
−
VBE(SAT)
−
Cobo
−
Current Gain-Bandwidth Product
fT
−
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
ton
−
toff
−
Notes: 7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Typ
190
80
8.3
−
−
320
340
110
22
110
147
135
265
0.85
0.90
10
200
46
722
Max
−
−
−
100
100
−
−
−
30
150
200
165
330
1.0
1.1
−
−
−
−
Unit
Test Condition
V
IC = 100µA
V
IC = 10mA
V
IE = 100µA
nA VCB = 60V , VCES = 60V
nA VEB = 5.6V
IC = 10mA, VCE = 5V
−
IC = 100mA, VCE = 5V
IC = 2A, VCE = 5V
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 10mA
V
IC = 1A, IB = 50mA
IC = 1A, IB = 100mA
IC = 2A, IB = 200mA
V
IC = 1A, VCE = 2V
V
IC = 1A, IB = 50mA
pF
MHz
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
ns VCE = 10V, IC = 0.5A
ns IB1 = -IB2 = 25mA
ZXTN26070CV
Document number: DS32129 Rev. 3 - 2
4 of 7
www.diodes.com
April 2010
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