ZXTN26020DMF_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR

1
I_C/I_B = 20
0.1
0.01
T_A = 150°C
T_A = 85°C
T_A = 125°C
T_A = 25°C
T_A = -55°C
0.001
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
T_A = 85°C
0.4
T_A = 125°C
T_A = 150°C
0.2
0
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
500
400
V_CE = 10V
A Product Line of
Diodes Incorporated
ZXTN26020DMF
1.0
V_CE = 5V
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2
T_A = 125°C
T_A = 150°C
0
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
100
C_ibo
10
C_obo
1
0 5 10 15 20 25 30 35 40
V_R, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
100
V_CBE = 20V
I_C = 0
300
10
200
100
0
0 5 10 15 20 25 30 35 40 45 50
I_C, COLLECTOR CURRENT (mA)
Fig. 10 Typical Gain-Bandwidth Product vs. Collector Current
1
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 11 Collector Cutoff Current vs. Ambient Temperature
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
4 of 6
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September 2009
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