ZXTN25100BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V, SOT23, medium power transistor

ZXTN25100BFH
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Symbol Min. Typ. Max. Unit Conditions
BV_CBO 170 220
V I_C = 100␮A
BV_CEX 170 210
BV_CEO
BV_ECX
100 120
6
7
BV_ECO
6 8.4
I_C = 100␮A, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
BV_EBO
7
8
V I_E = 100␮A
Collector cut-off current
I_CBO
<1 50 nA V_CB = 136V
20 ␮A _{VCB = 136V, Tamb= 100°C}
Collector emitter cut-off current I_CEX
-
100 nA V_CE = 136V; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
Emitter cut-off current
I_EBO
<1 50 nA V_EB = 5.6V
Collector-emitter saturation
voltage
V_CE(sat)
40
55 mV _{IC = 0,5A, IB = 50mA}^(*)
100 135 mV _{IC = 0,5A, IB = 10mA}^(*)
70
80 mV _{IC = 1A, IB = 100mA}^(*)
200 250 mV _{IC = 3A, IB = 300mA}^(*)
Base-emitter saturation voltage V_BE(sat)
940 1050 mV _{IC = 3A, IB = 300mA}^(*)
Base-emitter turn-on voltage V_BE(on)
890 1000 mV _{IC = 3A, VCE = 2V}^(*)
Static forward current transfer h_FE
ratio
100 200 300
50 85
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
20
I_C = 3A, V_CE = 2V^(*)
Transition frequency
f_T
160
MHz I_C = 100mA, V_CE = 5V
f = 100MHz
Output capacitance
C_OBO
9.4 20
Delay time
t_(d)
16
Rise time
t_(r)
55
Storage time
t_(s)
677
Fall time
t_(f)
95
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V. I_C = 500mA,
ns ^IB1 ^{= I}B2^{= 50mA.}
ns
ns
Issue 1 - May 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com