ZXTN25040DFL Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 40V, SOT23, NPN low power transistor

ZXTN25040DFL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
BV_CEX
breakdown voltage (forward
blocking)
Min.
130
130
Typ.
170
170
Max.
Unit Conditions
V I_C = 100␮A
V I_C = 100␮A; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
Collector-emitter breakdown BV_CEO 40 63
voltage (base open)
V _{IC = 10mA} ^(*)
Emitter-base breakdown
BV_EBO
7
8.3
voltage
V I_E = 100␮A
Emitter-collector breakdown BV_ECX
voltage (reverse blocking)
6 7.4
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
Emitter-collector breakdown BV_ECO
6
7.4
voltage (base open)
V I_E = 100␮A,
Collector cut-off current
I_CBO
<1 50 nA V_CB = 100V
20 ␮A _{VCB = 100V, Tamb= 100°C}
Collector emitter cut-off
I_CEX
current
<1 100 nA V_CE = 100V; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
Emitter cut-off current
I_EBO
<1 50 nA V_EB = 5.6V
Collector-emitter saturation V_CE(sat)
voltage
35 50 mV I_C = 0.5A, I_B = 50mA^(*)
60 80 mV I_C = 0.5A, I_B = 10mA^(*)
70 85 mV ^I_C ^{= 1A, I}_B ^{= 100mA}
145 185 mV I_C = 1.5A, I_B = 30mA^(*)
235 285 mV I_C = 4A, I_B = 400mA^(*)
Base-emitter saturation
voltage
V_BE(sat)
840 950 mV _{IC = 1.5A, IB = 30mA}^(*)
Base-emitter turn-on
voltage
V_BE(on)
770 850 mV _{IC = 1.5A, VCE = 2V}^(*)
Static forward current
transfer ratio
h_FE
300 450 900
300 400
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
170 250
I_C = 1.5A, V_CE = 2V^(*)
25 40
I_C = 4A, V_CE = 2V^(*)
Transition frequency
f_T
190
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_obo
t_(d)
t_(r)
t_(s)
t_(f)
11.7 20
64
108
428
130
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V,
ns ^IC ^{= 1A,}
ns ^{IB1 = IB2= 10mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 3 - March 2008
4
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