ZXTN25020DFL Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23, NPN low power transistor

ZXTN25020DFL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEX
voltage (forward blocking)
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-collector breakdown BV_ECX
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector cut-off current
BV_ECO
BV_EBO
I_CBO
Collector-emitter cut-off
current
Emitter cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(SAT)
Base-emitter saturation
voltage
V_BE(SAT)
Base-emitter turn-on voltage V_BE(ON)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_(d)
t_(r)
t_(s)
t_(f)
Min.
100
100
20
6
5
7
300
220
80
Typ. Max. Unit Conditions
125
V I_C = 100␮A
120
V I_C = 100 A; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
35
V _{IC = 10mA} ^(*)
8
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
6
V I_E = 100␮A,
8.3
V I_E = 100␮A
<1 50 nA V_CB = 80V
20 ␮A _{VCB = 80V, Tamb= 100°C}
-
100 nA V_CE = 80V; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
<1 50 nA V_EB = 5.6V
60
70 mV _{IC = 1A, IB = 100mA}^(*)
85 100 mV _{IC = 1A, IB = 20mA}^(*)
140 160 mV _{IC = 2A, IB = 40mA}^(*)
180 225 mV _{IC = 2A, IB = 20mA}^(*)
245 270 mV _{IC = 4,5A, IB = 450mA}^(*)
895 1000 mV _{IC = 2A, IB = 40mA}^(*)
825 900 mV _{IC = 2A, VCE = 2V}^(*)
450 900
I_C = 10mA, V_CE = 2V^(*)
350
I_C = 2A, V_CE = 2V^(*)
120
I_C = 4.5A, V_CE = 2V^(*)
215
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
16.5 25
67.7
72.2
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V. I_C = 1A,
ns ^IB1 ^{= I}B2^{= 10mA.}
361
ns
63.9
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ 2%.
Issue 4 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com