ZXTN25020CFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V, SOT23, NPN medium power transistor

ZXTN25020CFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol
BV_CBO
BV_CEX
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
BV_CEO
BV_EBO
BV_ECX
Emitter-collector breakdown BV_ECO
voltage (base open)
Collector-base cut-off current I_CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
f_T
Min.
70
70
20
7
6
5
200
180
90
25
Typ.
100
100
35
8.3
8.0
6.6
<1
-
<1
35
53
85
175
125
905
815
350
320
145
40
185
Max. Unit Conditions
V I_C = 100␮A
I_C = 100␮A, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC Յ 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
50
20
100
50
45
65
100
220
140
1000
nA V_CB = 56V
␮A _{VCB = 56V, Tamb= 100°C}
nA V_CE = 56V; R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV _{IC = 2A, IB = 40mA}^(*)
mV _{IC = 4.5A, IB = 90mA}^(*)
mV _{IC = 4.5A, IB = 450mA}^(*)
mV _{IC = 4.5A, IB = 90mA}^(*)
900 mV _{IC = 4.5A, VCE = 2V}^(*)
500
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 4.5A, V_CE = 2V^(*)
I_C = 10A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
16.8 25
70.5
88
266
65
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^IC ^{= 1A,}
ns ^{IB1 = IB2= 10mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - June 2006
4
© Zetex Semiconductors plc 2006
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