ZXTN25012EFL Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 12V, SOT23, NPN low power transistor

ZXTN25012EFL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV_CBO
20 40
V I_C = 100␮A
Collector-emitter breakdown BV_CEO
voltage
12 17
V _{IC = 10mA} ^(*)
Emitter-base breakdown
voltage
BV_EBO
7 8.3
V I_E = 100␮A
Emitter-collector breakdown BV_ECX
6
8
voltage (reverse blocking)
V I_E = 100␮A, R_BC Յ1k⍀ or
0.25v > V_BC > -0.25V
Emitter-collector breakdown BV_ECO
voltage (base open)
4.5 5.5
V I_E = 100␮A,
Collector cut-off current
I_CBO
<1 50 nA V_CB = 16V
20 ␮A V_CB = 16V, T_amb= 100°C
Emitter-base cut-off current I_EBO
<1 50 nA V_EB = 5.6V
Collector-emitter saturation
voltage
V_CE(sat)
50 65 mV _{IC = 1A, IB = 100mA}^(*)
70 85 mV _{IC = 1A, IB = 10mA}^(*)
105 130 mV _{IC = 2A, IB = 40mA}^(*)
235 300 mV _{IC = 5A, IB = 100mA}^(*)
Base-emitter saturation
voltage
V_BE(sat)
830 950 mV _{IC = 2A, IB = 40mA}^(*)
Base-emitter turn-on voltage V_BE(on)
745 850 mV _{IC = 2A, VCE = 2V}^(*)
Static forward current transfer h_FE
ratio
500 800 1500
500 700
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
370 575
I_C = 2A, V_CE = 2V^(*)
210 335
I_C = 5A, V_CE = 2V^(*)
30 55
I_C = 15A, V_CE = 2V^(*)
Transition frequency
f_T
260
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
C_obo
25 35 pF _{VCB = 10V, f = 1MHz}^(*)
Delay time
Rise time
Storage time
t_(d)
71
ns V_CC = 10V
t_(r)
70
ns ^{IC = 1A,}
I_B1 = I_B2= 10mA
t_(s)
233
ns
Fall time
t_(f)
72
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 2 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com