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| ZXTN2020F Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V, SOT23, NPN medium power transistor | |||
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ZXTN2020F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Symbol
V(BR)CBO
V(BR)CEV
V(BR)CEO
V(BR)EBO
ICEV
Collector-base cut-off
current
Emitter-base cut-off current
Static forward current
transfer ratio
ICBO
IEBO
HFE
Collector-emitter saturation VCE(sat)
voltage
Base-emitter saturation
voltage
VBE(sat)
Base-emitter turn-on voltage VBE(on)
Transition frequency
fT
Output capacitance
Turnâon time
Turn-off time
Cobo
t(on)
t(off)
Min.
160
160
100
7
100
100
35
Typ.
200
200
115
8
<1
<1
<1
220
200
60
13
20
40
85
120
0.94
0.84
130
22
37
910
Max.
20
20
10
300
30
50
105
150
1.05
0.94
Unit Conditions
V IC=100µA
V IC =1µA, -1V< VBE<+0.3V
V IC=10mA (a)
V IE=100µA
nA VCES=128V,
VBE = -1V
nA VCB=128V
nA VEB=6V
IC=10mA, VCE=2V(a)
IC=1A, VCE=2V(a)
IC=4A, VCE=2V(a)
IC=10A, VCE=2V(a)
mV IC=0.1A, IB=5mA(a)
mV IC=1A, IB=100mA(a)
mV IC=2A, IB=100mA(a)
mV IC=4A, IB=400mA(a)
V IC=4A, IB=400mA(a)
V
MHz
pF
ns
ns
IC=4A, VCE=2V(a)
Ic=100mA, VCE=10V,
f=50MHz
VCB=10V, f=1MHz
VCC=10V, IC=1A,
IB1=IB2=100mA
NOTES:
(a) Measured under pulsed conditions. Pulse width=300â®S. Duty cycle Õ
2%.
Issue 4 - January 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com
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