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ZXTN2011Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 | |||
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ZXTN2011Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector base breakdown voltage
Collector emitter breakdown voltage
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
RÕ
1kâ
IEBO
VCE(SAT)
Base emitter saturation voltage
Base emitter turn on voltage
Static forward current transfer ratio
VBE(SAT)
VBE(ON)
hFE
Transition frequency
fT
200 235
V IC = 100â®A
200 235
V IC = 1â®A, RB Õ
1kâ
100 115
V IC = 10mA*
7
8.1
V IE = 100â®A
50 nA VCB = 150V
0.5 â®A VCB = 150V, Tamb=100ÐC
100 nA VCB = 150V
0.5 â®A VCB = 150V, Tamb=100ÐC
10
nA VEB = 6V
20
30 mV IC = 0.1A, IB= 5mA*
45
60 mV IC = 1A, IB = 100mA*
85 115 mV IC = 2A, IB = 100mA*
155 195 mV IC = 5A, IB = 500mA*
1000 1100 mV IC = 5A, IB = 500mA*
900 1000 mV IC = 5A, VCE = 2V*
100 230
IC = 10mA, VCE = 2V*
100 200 300
IC = 2A, VCE = 2V*
30
60
IC = 5A, VCE = 2V*
10
20
IC = 10A, VCE = 2V*
130
MHz IC = 100mA, VCE = 10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
26
41
1010
pF VCB = 10V, f= 1MHz*
ns IC = 1A, VCC = 10V,
IB1 = IB2 = 100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 2 - MAY 2006
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