ZXTN2011G_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTN2011G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
DC Current Gain (Note 9)
Symbol Min
BVCBO 200
BVCER 200
BVCEO 100
BVEBO
7
ICBO
—
—
ICER
—
R≤1kΩ
—
IEBO
—
—
—
VCE(sat)
—
—
—
VBE(sat)
—
VBE(on)
—
100
hFE
100
30
10
Typ
235
235
115
8.1
—
—
—
—
—
21
50
95
190
1.02
0.92
230
200
60
20
Transition Frequency
fT
—
Output Capacitance (Note 9)
Switching Times
Cobo
—
tON
—
tOFF
—
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
130
26
41
1,010
Max
—
—
—
—
50
0.5
100
0.5
10
35
65
125
220
1.12
1
—
300
—
—
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
V
V
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 10mA
IE = 100µA
VCB = 150V
VCB = 150V, TA = +100°C
VCB = 150V
VCB = 150V, TA = +100°C
VEB = 6V
IC = 0.1A, IB = 5mA
IC = 1A, IB = 100mA
IC = 2A, IB = 100mA
IC = 5A, IB = 500mA
IC = 5A, IB = 500mA
IC = 5A, VCE = 2V
IC = 10mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 5A, VCE = 2V
IC = 10A, VCE = 2V
VCE = 10V, IC = 100mA,
f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 100mA
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
4 of 7
www.diodes.com
January 2016
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