ZXTN2011G Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2011G
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
R Յ 1k⍀
I_EBO
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
H_FE
f_T
200 235
V I_C=100␮A
200 235
V I_C=1␮A, RBՅ1k⍀
100 115
V I_C=10mA*
7
8.1
V I_E=100␮A
50 nA V_CB=150V
0.5 ␮A V_CB=150V,T_amb=100ЊC
100 nA V_CB=150V
0.5 ␮A V_CB=150V,T_amb=100ЊC
10 nA V_EB=6V
21
35 mV I_C=0.1A, I_B=5mA*
50
65 mV I_C=1A, I_B=100mA*
95 125 mV I_C=2A, I_B=100mA*
180 220 mV I_C=5A, I_B=500mA*
1020 1120 mV I_C=5A, I_B=500mA*
920 1000 mV I_C=5A, V_CE=2V*
100 230
I_C=10mA, V_CE=2V*
100 200 300
I_C=2A, V_CE=2V*
30
60
I_C=5A, V_CE=2V*
10
20
I_C=10A, V_CE=2V*
130
MHz I_C=100mA, V_CE=10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
26
41
1010
pF V_CB=10V, f=1MHz*
ns I_C=1A, V_CC=10V,
I_B1=I_B2=100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.
SEMICONDUCTORS
4
ISSUE 2 - MAY 2006