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| ZXTN2010G_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | |||
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ZXTN2010G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
R Õ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
150 190
V IC=100â®A
150 190
V IC=1â®A, RBÕ
1kâ
60 80
V IC=10mA*
7
8.1
V IE=100â®A
50 nA VCB=120V
0.5 â®A VCB=120V,Tamb=100ÐC
100 nA VCB=120V
0.5 â®A VCB=120V,Tamb=100ÐC
10 nA VEB=6V
20
30 mV IC=100mA, IB=5mA*
45
60 mV IC=1A, IB=100mA*
50
70 mV IC=1A, IB=50mA*
100 135 mV IC=2A, IB=50mA*
210 260 mV IC=6A, IB=300mA*
1000 1100 mV IC=6A, IB=300mA*
940 1050 mV IC=6A, VCE=1V*
100 200
IC=10mA, VCE=1V*
100 200 300
IC=2A, VCE=1V*
55 105
IC=5A, VCE=1V*
20
40
IC=10A, VCE=1V*
130
MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
31
pF VCB=10A, f=1MHz*
42
ns IC=1A, VCC=10V,
760
IB1=IB2=100mA
NOTES
(1) Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 2 - MAY 2006
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