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| ZXTN2005G Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 25V NPN LOW SATURATION TRANSISTOR IN SOT223 | |||
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ZXTN2005G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
RÕ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
fT
60 120
V IC=100â®A
60 120
V IC=1â®A, RBÕ
1kâ
25 35
V IC=10mA*
7
8.1
V IE=100â®A
50 nA VCB=50V
0.5 â®A VCB=50V, Tamb=100ÐC
100 nA VCB=50V
0.5 â®A VCB=50V, Tamb=100ÐC
10 nA VEB=6V
28
40 mV IC=500mA, IB=10mA*
35
50 mV IC=1A, IB=100mA*
55
75 mV IC=1A, IB=10mA*
115 140 mV IC=2A, IB=10mA*
195 230 mV IC=6.5A, IB=150mA*
980 1080 mV IC=6.5A, IB=150mA*
890 980 mV IC=6.5A, VCE=1V*
300 400
IC=10mA, VCE=1V*
300 450
IC=1A, VCE=1V*
200 275
IC=7A, VCE=1V*
40
55
IC=20A, VCE=1V*
150
IC=100mA, VCE=10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
48
pF VCB=10V, f=1MHz*
33
ns IC=1A, VCC=10V,
464
IB1=-IB2=100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 3 - MAY 2006
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