ZXTN19100CG Datasheet, PDF (4/8 Pages) Diodes Incorporated – 100V NPN low sat medium power transistor in SOT223

ZXTN19100CG
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Collector-Base breakdown
Voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Symbol
BV_CBO
BV_CEX
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_CEO
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BV_ECO
BV_EBO
I_CBO
Collector-Emitter cut-off I_CEX
current
Min.
200
200
100
6
5
7
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
V_BE(sat)
V_BE(on)
Typ.
240
240
120
8.3
8
8.3
<1
<1
50
110
245
1005
950
Max.
50
0.5
100
50
65
140
430
1100
1050
Unit Conditions
V I_C = 100␮A
V I_C = 100␮A, R_BE < 1kΩ
or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC < 1kΩ
or
0.25V > V_BC > -0.25V
V I_E = 100␮A
V I_E = 100␮A
nA V_CB = 200V
␮A _{VCB = 200V, Tamb= 100°C}
nA V_CE = 200V, R_BE < 1kΩ
or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV I_C = 5.5A, I_B = 550mA^(*)
mV _{IC = 5.5A, IB = 550mA}^(*)
mV _{IC = 5.5A, VCE = 2V}^(*)
Static forward current
h_FE
transfer ratio
Transition frequency
f_T
200 300 500
130 190
25
I_C = 100mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 5.5A, V_CE = 2V^(*)
150
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Input capacitance
Output capacitance
Delay Time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_(d)
t_(r)
t_(s)
t_(f)
305 400
15.7 25
28.3
23.6
962
133
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns
ns ^IC ^{= 500mA, V}CC ^{= 10V,}
ns ^IB1 ^{= -I}B2 ^{= 50mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - February 2008
4
© Zetex Semiconductors plc 2008
www.zetex.com