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ZXTN19020DG_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V NPN HIGH GAIN TRANSISTOR IN SOT223
A Product Line of
Diodes Incorporated
ZXTN19020DG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(forward blocking)
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
BVCBO
BVCEX
BVCEO
BVECX
BVECO
BVEBO
ICBO
Min Typ
70
100
70
100
20
30
6
8.4
4.5
5.7
7
8.4

< 1


Collector-Emitter Cut-Off Current
ICEX


Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE

<1

27

50

80

63

85

200

1040

910
300 450
260 390
130 175
50
75

30
Current Gain-Bandwidth Product (Note 11)
fT

Input Capacitance (Note 11)
Output Capacitance (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Cibo

Cobo

td

tr

ts

tf

Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
160
297
32.6
129
96
398
90
Max






50
0.5
100
50
35
70
100
80
110
250
1150
1050
900





400
40




Unit
V
V
V
V
V
V
nA
µA
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV





MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = 100µA
IC = 100µA, RBE <1kΩ or
-1V< VBE > 0.25V
IC = 10mA
IC = 100µA, RBC <1kΩor
0.25V< VBC > -0.25V
IE = 100µA
IE = 100µA
VCB = 70V
VCB = 70V, TA = +100°C
VCE = 70V, RBE <1kΩ or
-1V < VBE > 0.25V
VEB = 5.6V
IC = 1A, IB = 100mA
IC = 1A, IB = 10mA
IC = 2A, IB = 20mA
IC = 2A, IB = 40mA
IC = 4A, IB = 400mA
IC = 9A, IB = 450mA
IC = 9A, IB = 450mA
IC = 9A, VCE = 2V
IC = 100mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 9A, VCE = 2V
IC = 15A, VCE = 2V
IC = 20A, VCE = 2V
VCE = 10V, IC = 50mA,
f = 100MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
IC = 1A, VCC = 10V,
IB1 = -IB2 = 10mA
ZXTN19020DG
Document Number DS33678 Rev. 2 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated