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ZXTN10150DZ_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 150V NPN LED DRIVING TRANSISTOR IN SOT89
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Diodes Incorporated
ZXTN10150DZ
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 5)
Base-Emitter Turn-On Voltage (Note 5)
Output Capacitance
Symbol
Min
BVCBO
150
BVCEO
150
BVEBO
7
ICBO
-
IEBO
-
200
hFE
60
100
VBE(on)
-
COBO
-
Current Gain-Bandwidth Product
ft
-
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
t(d)
-
t(r)
-
t(s)
-
t(f)
-
t(s)
-
t(f)
-
Notes: 5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Typ
300
175
8.3
-
-
450
180
150
0.701
10
135
625
562
2465
289
461
52
Max
-
-
-
50
50
-
-
-
0.95
-
-
-
-
-
-
-
-
Unit
V
V
V
nA
nA
-
V
pF
MHz
ns
ns
ns
ns
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 150V
VEB = 7V
IC = 30mA, VCE = 5V
IC = 85mA, VCE = 0.20V
IC = 150mA, VCE = 0.25V
IC = 150mA, VCE = 0.25V
VCB = 10V, f = 1MHz
VCB = 10V, Ic = 10mA,
f = 100MHz
VCC = 110V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 0.25V
VCC = 110V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 4V
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
4 of 7
www.diodes.com
November 2010
© Diodes Incorporated