ZXTN08400BFF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 400V, SOT23F, NPN medium power high voltage transistor

ZXTN08400BFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol
BV_CBO
BV_CEX
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
BV_CEO
BV_ECX
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector-base cut-off current
BV_ECO
BV_EBO
I_CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_d
t_r
t_s
t_f
Min. Typ. Max. Unit Conditions
450 550
V I_C = 100␮A
450 550
400 500
V I_C = 100␮A, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA}^(*)
6 8.0
6 8.5
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
7 8.1
V I_E = 100␮A
<1 50 nA V_CB = 360V
20 ␮A _{VCB = 360V, Tamb= 100°C}
<1 100 nA V_CE = 360V, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
<1 50 nA V_EB = 5.6V
70 85 mV _{IC = 20mA, IB = 1mA} ^(*)
50 70 mV _{IC = 50mA, IB = 5mA}^(*)
120 170 mV _{IC = 300mA, IB = 30mA}^(*)
125 175 mV _{IC = 500mA, IB = 100mA}^(*)
865 950 mV _{IC = 500mA, IB = 100mA}^(*)
800 900 mV _{IC = 500mA, VCE = 10V}^(*)
90 165
I_C = 1mA, V_CE = 5V^(*)
100 180 300
I_C = 50mA, V_CE = 5V^(*)
10 20
I_C = 500mA, V_CE = 10V^(*)
40
MHz I_C = 10mA, V_CE = 20V
f = 20MHz
8 10
100
52
3122
pF _{VCB = 20V, f = 1MHz}^(*)
ns V_CC = 100V.
ns ^{IC = 100mA,}
ns ^{IB1 = 10mA, IB2= 20mA.}
240
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - September 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com