ZXTN07012EFF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V, SOT23F, NPN high gain power transistor

ZXTN07012EFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Emitter-collector breakdown BV_ECX
voltage (reverse blocking)
Emitter-collector breakdown BV_ECO
voltage (base open)
Collector-base cut-off current I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_Obo
t_d
t_r
t_s
t_f
Min.
20
12
7
6
3.0
500
400
330
140
150
Typ.
40
17
8.3
8.2
5.3
<1
<1
25
60
50
105
215
945
850
800
650
530
230
220
229
40
26.8
14.2
250
67.7
Max.
50
20
50
40
85
70
150
320
1050
950
1500
50
Unit Conditions
V IC = 100␮A
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
nA V_CB = 16V
␮A _{VCB = 16V, Tamb= 100°C}
nA V_EB = 5.6V
mV _{IC = 100mA, IB = 0.5mA}^(*)
mV _{IC = 1A, IB = 10mA}^(*)
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 2A, IB = 20mA}^(*)
mV _{IC = 4.5A, IB = 45mA}^(*)
mV _{IC = 4.5A, IB = 45mA}^(*)
mV _{IC = 4.5A, VCE = 2V}^(*)
I_C = 0.1A, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 4.5A, V_CE = 2V^(*)
I_C = 10A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 5V
f = 50MHz
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^{IC = 500mA,}
ns ^{IB1 = IB2= 50mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - September 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com