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ZXTN04120HK_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252 | |||
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
140
â
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
120
â
Emitter-Base Breakdown Voltage
BVEBO
14
â
Collector-Base Cutoff Current
ICBO
â
â
Collector-Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 11)
ICES
â
â
IEBO
â
â
2,000
â
hFE
5,000
2,000
â
â
500
â
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
â
â
â
â
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
â
â
Base-Emitter Turn-On Voltage (Note 11)
VBE(on)
â
â
Input Capacitance (Note 11)
Cibo
â
90
Output Capacitance (Note 11)
Cobo
â
15
Current Gain-Bandwidth Product (Note 11)
fT
150
â
Turn-On Time
Turn-Off Time
ton
â
0.5
toff
â
1.6
Note:
11. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%.
A Product Line of
Diodes Incorporated
ZXTN04120HK
Max
â
â
â
100
10
100
100
â
â
100,000
â
1
1.5
1.8
1.7
â
â
â
â
â
Unit
V
V
V
nA
µA
nA
nA
â
V
V
V
pF
pF
MHz
µs
µs
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 120V
VCB = 120V, TA = +120°C
VCE = 120V
VEB = 8V
IC = 50mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 250mA, IB = 0.25mA
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
IC = 1A, VCE = 5V
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCE = 10V, IC = 100mA,
f=20MHz
VCC = 10V, IC = 500mA
IB1 = -IB2 = 0.5mA
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
4 of 7
www.diodes.com
January 2014
© Diodes Incorporated
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