ZXTN04120HK Datasheet, PDF (4/7 Pages) Diodes Incorporated – 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252

Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BV_CBO
140
—
Collector-Emitter Breakdown Voltage (Note 11)
BV_CEO
120
—
Emitter-Base Breakdown Voltage
BV_EBO
14
—
Collector-Base Cutoff Current
I_CBO
—
—
Collector-Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 11)
I_CES
—
—
I_EBO
—
—
2,000
—
h_FE
5,000
2,000
—
—
500
—
Collector-Emitter Saturation Voltage (Note 11)
V_CE(sat)
—
—
—
—
Base-Emitter Saturation Voltage (Note 11)
V_BE(sat)
—
—
Base-Emitter Turn-On Voltage (Note 11)
V_BE(on)
—
—
Input Capacitance (Note 11)
C_ibo
—
90
Output Capacitance (Note 11)
C_obo
—
15
Current Gain-Bandwidth Product (Note 11)
f_T
150
—
Turn-On Time
Turn-Off Time
t_on
—
0.5
t_off
—
1.6
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
ZXTN04120HK
Max
—
—
—
100
10
100
100
—
—
100,000
—
1
1.5
1.8
1.7
—
—
—
—
—
Unit
V
V
V
nA
µA
nA
nA
—
V
V
V
pF
pF
MHz
µs
µs
Test Condition
I_C = 100µA
I_C = 10mA
I_E = 100µA
V_CB = 120V
V_CB = 120V, T_A = +120°C
V_CE = 120V
V_EB = 8V
I_C = 50mA, V_CE = 5V
I_C = 500mA, V_CE = 5V
I_C = 1A, V_CE = 5V
I_C = 2A, V_CE = 5V
I_C = 250mA, I_B = 0.25mA
I_C = 1A, I_B = 1mA
I_C = 1A, I_B = 1mA
I_C = 1A, V_CE = 5V
V_EB = 0.5V, f = 1MHz
V_CB = 10V, f = 1MHz
V_CE = 10V, I_C = 100mA,
f=20MHz
V_CC = 10V, I_C = 500mA
I_B1 = -I_B2 = 0.5mA
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
4 of 7
www.diodes.com
January 2014
© Diodes Incorporated