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| ZXTDC3M832 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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OBSOLETE - PLEASE USE ZXTC6719MC
ZXTDC3M832
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
100
TYP. MAX. UNIT
190
V
CONDITIONS.
IC=100â®A
50
65
V
IC=10mA*
7.5
8.2
V
IE=100â®A
25 nA
VCB=80V
25 nA
VEB=6V
25 nA
VCES=40V
10
20 mV
70
100 mV
145 200 mV
115 220 mV
225 300 mV
270 320 mV
IC=0.1A, IB=10mA*
IC=1A, IB=50mA*
IC=1A, IB=10mA*
IC=2A, IB=50mA*
IC=3A, IB=100mA*
IC=4A, IB=200mA*
1.00 1.05 V
IC=4A, IB=200mA*
0.94 1.00 V
IC=4A, VCE=2V*
200 400
300 450
200 400
100 225
40
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
100 165
MHz
IC=50mA, VCE=10V
f=100MHz
12
20 pF
170
ns
750
ns
VCB=10V, f=1MHz
VCC=10V, IC=1A
IB1=IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - JUNE 2002
4
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