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| ZXTD718MC_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR | |||
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A Product Line of
Diodes Incorporated
ZXTD718MC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
-25
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-20
Emitter-Base Breakdown Voltage
BVEBO
-7
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector Emitter Cutoff Current
ICES
-
300
300
Static Forward Current Transfer Ratio (Note 10)
hFE
150
15
-
-
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 10)
VBE(on)
-
Base-Emitter Saturation Voltage (Note 10)
VBE(sat)
-
Output Capacitance
Cobo
-
Transition Frequency
fT
150
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 10. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Typ
-35
-25
8.5
-
-
-
475
450
230
30
-19
-170
-190
-240
-225
-0.87
-1.01
21
180
40
670
Max
-
-
-
-100
-100
-100
-
-
-
-
-30
-220
-250
-350
-300
-0.95
-1.12
30
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = 10mA
IE = -100µA
VCB = -20V
VEB = -6V
VCES = -16V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
IC = - 0.1A, IB = -10mA
IC = -1A, IB = -20mA
IC = -1.5A, IB = -50mA
IC = -2.5A, IB = -150mA
IC = -3.5A, IB = -350m
IC = -3.5A, VCE = -2V
IC = -3.5A, IB = -350mA
VCB = 10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -10V, IC = 1A
IB1 = IB2 = 20mA
ZXTD718MC
Document Number DS32000 Rev. 2 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
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