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| ZXTD619MC_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR | |||
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A Product Line of
Diodes Incorporated
ZXTD619MC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 10)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ Max
100 190
-
50
65
-
7
8.2
-
-
-
100
-
-
100
-
-
100
200 400
-
300 450
-
200 400
-
100 225
-
-
40
-
Collector-Emitter Saturation Voltage
(Note 10)
-
-
VCE(sat)
-
-
-
-
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
100
Turn-on Time
Turn-off Time
ton
-
toff
-
Notes: 10. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
10
70
145
115
225
270
0.94
1.00
12
165
170
750
20
100
200
220
300
320
1.00
1.07
20
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
-
-
-
-
mV
mV
mV
mV
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 6V
VCES = 40V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC =0.1A, IB = 10mA
IC = 1A, IB = 50mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
IC = 4A, IB = 200mA
IC = 4A, VCE = 2V
IC = 4A, IB = 200mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
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