 English |
|
|
|
|
|
|
|
| ZXTD618MC Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR | |||
| |||
| ◁ |
A Product Line of
Diodes Incorporated
ZXTD618MC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 3)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ Max
40
100
-
20
27
-
7.5
8.2
-
-
-
25
-
-
25
-
-
25
200 400
-
300 450
-
200 360
-
100 180
-
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Turn-On Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Output Capacitance
VCE(sat)
VBE(on)
VBE(sat)
Cobo
-
8
15
-
90
150
-
115 135
-
190 250
-
210 270
-
0.88 0.95
-
0.98 1.05
-
23
30
Transition Frequency
Turn-on Time
Turn-off Time
fT
100 140
-
ton
-
170
-
toff
-
400
-
Notes: 3. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ⤠2%
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 32V
VEB = 6V
VCES = 16V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
IC = 4.5A, IB = 125mA
IC = 4.5A, VCE = 2V
IC = 4.5A, IB = 125mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 3A
IB1 = IB2 = 10mA
ZXTD618MC
Document Number DS31931 Rev. 1 - 2
4 of 7
www.diodes.com
January 2010
© Diodes Incorporated
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese