ZXTD617MC_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL 15V NPN LOW SATURATION TRANSISTORS

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ZXTD617MC
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
I_CES
h_FE
Min Typ Max
40
70
-
15
18
-
7
8.2
-
-
-
100
-
-
100
-
-
100
200 415
-
300 450
-
200 320
-
150 240
-
-
80
-
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
V_CE(sat)
V_BE(on)
V_BE(sat)
C_obo
-
8
14
-
70
100
-
165 200
-
240 310
-
200
-
-
0.88 0.96
-
0.94 1.05
-
30
40
Transition Frequency
f_T
80
120
-
Turn-on Time
Turn-off Time
t_on
-
120
-
t_off
-
160
-
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
Unit
V
V
V
nA
nA
nA
-
-
-
-
-
mV
mV
mV
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = 100µA
I_C = 10mA
I_E = 100µA
V_CB = 30V
V_EB = 6V
V_CES = 12V
I_C = 10mA, V_CE = 2V
I_C = 200mA, V_CE = 2V
I_C = 3A, V_CE = 2V
I_C = 5A, V_CE = 2V
I_C = 12A, V_CE = 2V
I_C =0.1A, I_B = 10mA
I_C = 1A, I_B = 10mA
I_C = 3A, I_B = 50mA
I_C =4.5A, I_B = 50mA
I_C =4.5A, I_B = 100mA
I_C = 4.5A, V_CE = 2V
I_C = 4.5A, I_B = 50mA
V_CB = 10V. f = 1MHz
V_CE = 10V, I_C = 50mA,
f = 100MHz
V_CC = 10V, I_C = 1A
I_B1 = I_B2 = 10mA
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
4 of 7
www.diodes.com
December 2010
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