ZXTD3M832 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR

OBSOLETE - PLEASE USE ZXTD720MC
ZXTD3M832
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
V_CE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
V_BE(sat)
V_BE(on)
h_FE
Transition Frequency
f_T
-50 -80
V I_C=-100␮A
-40 -70
V I_C=-10mA*
-7.5 -8.5
V I_E=-100␮A
-25 nA V_CB=-40V
-25 nA V_EB=-6V
-25 nA V_CES=-32V
-25
-150
-195
-210
-260
-40
-220
-300
-300
-370
mV I_C=-0.1A, I_B=-10mA*
mV I_C=-1A, I_B=-50mA*
mV I_C=-1.5A, I_B=-100mA*
mV I_C=-2A, I_B=-200mA*
mV I_C=-2.5A, I_B=-250mA*
-0.97 -1.05 V I_C=-2.5A, I_B=-250mA*
-0.89 -0.95 V I_C=-2.5A, V_CE=-2V*
300 480
300 450
180 290
60 130
12
22
I_C=-10mA, V_CE=-2V*
I_C=-0.1A, V_CE=-2V*
I_C=-1A, V_CE=-2V*
I_C=-1.5A, V_CE=2V*
I_C=-3A, V_CE=-2V*
150 190
MHz I_C=-50mA, V_CE=-10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
C_obo
t_(on)
t_(off)
19
25
pF V_CB=-10A, f=1MHz
40
ns _{VCC=-15V, IC=-0.75A}
435
ns ^{IB1=IB2=-15mA}
*Measured under pulsed conditions. Pulse width=300␮s. Duty cycle Յ 2%
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2003