ZXTD2090E6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26

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Diodes Incorporated
ZXTD2090E6
Electrical Characteristics - Q1 & Q2 common (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
50

Collector-Emitter Breakdown Voltage (Note 13)
BVCEO
50

Emitter-Base Breakdown Voltage
BVEBO
7

Collector-Base Cut-Off Current
ICBO


Collector-Emitter Cut-Off Current
ICES


Emitter Cut-Off Current
IEBO


DC Current Gain (Note 13)
200
420
300
450
hFE
200
350
75
130
20
60
24
Collector-Emitter Saturation Voltage (Note 13)
VCE(sat)

60
120
160
Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
Output Capacitance
VBE(sat)

940
VBE(on)

850
Cobo

10
Current Gain-Bandwidth Product
fT

215
Turn-On Time
Turn-Off Time
ton

150
toff

425
Note:
13. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max



10
10
10

35
80
200
270
1100
1100




Unit
V
V
V
nA
nA
nA

mV
mV
mV
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 40V
VCES = 40V
VEB = 5.6V
IC = 10mA, VCE = 2V
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 100mA, IB = 10mA
IC = 250mA, IB = 10mA
IC = 500mA, IB = 10mA
IC = 1A, IB = 50mA
IC = 1A, IB = 50mA
IC = 1A, VCE = 2V
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 100mA
ZXTD2090E6
Document number DS31896 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated