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| ZXTCM322 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPS™ Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR | |||
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OBSOLETE - PLEASE USE ZXTN619MA
ZXTCM322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
100
190
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
50
65
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
7.5
8.2
V
IE=100â®A
25 nA
VCB=80V
25 nA
VEB=6V
25 nA
VCES=40V
10
20 mV
IC=0.1A, IB=10mA*
70
100 mV
IC=1A, IB=50mA*
145
200 mV
IC=1A, IB=10mA*
115
220 mV
IC=2A, IB=50mA*
225
300 mV
IC=3A, IB=100mA*
270
320 mV
IC=4A, IB=200mA*
1.00 1.05 V
IC=4A, IB=200mA*
0.94 1.00 V
IC=4A, VCE=2V*
200 400
300 450
200 400
100 225
40
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
100 165
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
12
20 pF
170
ns
750
ns
VCB=10V, f=1MHz
VCC=10V, IC=1A
IB1=IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 2 - JUNE 2002
4
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