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ZXTC6719MC Datasheet, PDF (4/9 Pages) Diodes Incorporated – DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION
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Diodes Incorporated
ZXTC6719MC
Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 3)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ Max
Unit
100 190
-
V
50
65
-
V
7.5
8.2
-
V
-
-
25
nA
-
-
25
nA
-
-
25
nA
200 400
-
300 450
-
200 400
-
-
100 225
-
-
40
-
Collector-Emitter Saturation Voltage
(Note 3)
Base-Emitter Turn-On Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
ton
toff
-
10
20
-
70
100
-
145 200
-
115 220
-
225 300
-
270 320
-
0.94 1.00
-
1.00 1.05
-
12
20
100 165
-
-
170
-
-
750
-
mV
V
V
pF
MHz
ns
ns
Notes: 3. Measured under pulsed conditions.
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 6V
VCES = 40V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 1A, IB = 5mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
IC = 4A, IB = 200mA
IC = 4A, VCE = 2V
IC = 4A, IB = 200mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
ZXTC6719MC
Document number: DS31928 Rev. 2 - 2
4 of 9
www.diodes.com
January 2010
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