ZXTC2045E6_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

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ZXTC2045E6
Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 14)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 14)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
BVCBO
BVCEV
BVCEO
BVEBO
ICBO
ICES/R
IEBO
hFE
VCE(sat)
VBE(sat)
Cobo
fT
td
tr
ts
tf
Min Typ Max Unit
Test Condition
40
-

40
-

30
-

7
8.3 

<1
20

<1
20

<1
20
V I_C = 100µA, I_E = 0
V I_C = 1µA, 0.25V > V_BE > 1.0V
V I_C = 10mA, I_B = 0
V I_E = 100µA, I_C = 0
nA V_CB = 32V
nA V_CE = 16V, R ≤ 1kΩ
nA V_EB = 6V
180 300 500
 I_C = 100mA, V_CE = 2V

 375
mV I_C = 750mA, I_B = 15mA

 1,200 mV I_C = 750mA, I_B = 15mA

9
20
pF V_CB = 10V, f = 1.0MHz
 265 
MHz V_CE = 10V, I_C = 50mA, f = 100MHz

10

ns

12

 185 
ns V_CC = 10V, I_C = 1A
ns I_B1 = -I_B2 = 50mA

45

ns
Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 14)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 14)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
BVCBO
BVCEV
BVCEO
BVEBO
ICBO
ICES/R
IEBO
hFE
VCE(sat)
VBE(sat)
Cobo
fT
td
tr
ts
tf
Min Typ Max Unit
Test Condition
-40
-

-40
-

-30
-

-7 -8.3 

<-1 -20

<-1 -20

<-1 -20
V I_C = -100µA, I_E = 0
V I_C = -1µA, 0.25V < V_BE < 1.0V
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA V_CB = -32V
nA V_CE = -16V, R ≤ 1kΩ
nA V_EB = -6V
180 300 500
 I_C = -100mA, V_CE = -2V

 -375
mV I_C = -750mA, I_B = -15mA

 -1,200 mV I_C = -750mA, I_B = -15mA

9
20
pF V_CB = -10V, f = 1.0MHz
 195 

16

MHz V_CE = -10V, I_C = -50mA, f = 100MHz
ns

11

 220 
ns V_CC = -10V, I_C = -1A
ns I_B1 = -I_B2 = -50mA

31

ns
Note: 14. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
4 of 6
www.diodes.com
March 2015
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