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| ZXT951K Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK | |||
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ZXT951K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
-100
-100
-60
-7
100
100
50
15
-125
-125
-80
-8.1
Ͻ1
Ͻ1
Ͻ1
-13
-60
-115
-315
-1.05
-0.92
230
200
110
40
120
-20
-20
-10
-25
-90
-165
-400
-1.2
-1.05
300
V IC=-100â®A
V IC=-100â®A, RBE=Õ
1kâ
V IC=-10mA*
V IE=-100â®A
nA VCB=-80V
nA VCB=-80V, RBE=Õ
1kâ
nA VEB=-6V
mV IC=-0.1A, IB=-10mA*
mV IC=-1A, IB=-100mA*
mV IC=-2A, IB=-200mA*
mV IC=-6A, IB=-600mA*
mV IC=-6A, IB=-600mA*
mV IC=-6A, VCE=-1V*
IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-6A, VCE=-1V*
IC=-10A, VCE=-1V*
MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
74
pF VCB=-10V, f=1MHz*
82
nS IC=-2A, VCC=-10V,
350
nS IB1=IB2=-200mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
4
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