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ZXT690BK_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR | |||
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
60
Collector-Emitter Breakdown Voltage (Note 13)
BVCEO
45
Emitter-Base Breakdown Voltage
BVEBO
7
Collector Cutoff Current
ICBO
â¯
Collector Cutoff Current
ICES
â¯
Emitter Cutoff Current
IEBO
â¯
Collector-Emitter Saturation Voltage (Note 13)
VCE(sat)
â¯
Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
DC Current Gain (Note 13)
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
VBE(sat)
â¯
VBE(on)
â¯
500
400
hFE
150
60
fT
150
Cobo
â¯
ton
â¯
toff
â¯
Typ
145
65
8.2
<1
<1
<1
50
240
210
230
1.0
0.9
700
600
350
120
â¯
16
33
1300
Note:
13. Measured under pulsed conditions. Pulse width ⤠300μs; duty cycle ⤠2%.
A Product Line of
Diodes Incorporated
ZXT690BK
Max
â¯
â¯
â¯
20
20
20
85
360
320
350
1.2
1.1
â¯
â¯
â¯
â¯
â¯
Unit
V
V
V
nA
nA
nA
mV
mV
mV
â¯
MHz
pF
ns
ns
Test Condition
IC = 100μA
IC = 10mA
IE = 100μA
VCB = 35V
VCB = 35V
VEB = 5.6V
IC = 0.1A, IB = 0.5mA
IC = 1A, IB = 5mA
IC = 2A, IB = 40mA
IC = 3A, IB = 150mA
IC = 3A, IB = 150mA
IC = 3A, VCE = 2V
IC = 100mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 3A, VCE = 2V
IC = 50mA, VCE = 5V, f = 50MHz
VCB = 10V, f = 1MHz
IC = 500mA, VCC = 10V,
IB1 = -IB2 = 50mA
ZXT690BK
Document number: DS31996 Rev. 4 - 2
4 of 7
www.diodes.com
January 2014
© Diodes Incorporated
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