ZXT690BK Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK

A Product Line of
Diodes Incorporated
ZXT690BK
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Min
BV_CBO
60
BV_CEO
45
BV_EBO
5
I_CBO
⎯
I_CES
⎯
I_EBO
⎯
Collector-Emitter Saturation Voltage (Note 6)
V_CE(sat)
⎯
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
DC Current Gain (Note 6)
V_BE(sat)
V_BE(on)
⎯
⎯
500
400
h_FE
150
60
Current Gain-Bandwidth Product
f_T
⎯
Output Capacitance (Note 6)
Turn-On Time
Turn-Off Time
C_obo
⎯
t_on
⎯
t_off
⎯
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Typ
145
65
8.2
<1
<1
<1
50
240
210
230
1.0
0.9
⎯
⎯
16
33
1300
Max
⎯
⎯
⎯
20
20
20
85
360
320
350
1.2
1.1
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
nA
nA
mV
mV
mV
⎯
MHz
pF
ns
ns
Test Condition
I_C = 100μA
I_C = 10mA
I_E = 100μA
V_CB = 35V
V_CB = 35V
V_EB = 4V
I_C = 0.1A, I_B = 0.5mA
I_C = 1A, I_B = 5mA
I_C = 2A, I_B = 40mA
I_C = 3A, I_B = 150mA
I_C = 3A, I_B = 150mA
I_C = 3A, V_CE = 2V
I_C = 100mA, V_CE = 2V
I_C = 1A, V_CE = 2V
I_C = 2A, V_CE = 2V
I_C = 3A, V_CE = 2V
I_C = 50mA, V_CE = 5V, f =
50MHz
V_CB = 10V, f = 1MHz
I_C = 500mA, V_CC = 10V,
I_B1 = I_B2 = 50mA
ZXT690BK
Document number: DS31996 Rev. 2 - 2
4 of 7
www.diodes.com
October 2009
© Diodes Incorporated