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| ZXT4M322 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 70V PNP LOW SATURATION TRANSISTOR | |||
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OBSOLETE - PLEASE USE ZXTP722MA
ZXT4M322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-70 -150
V IC=-100â®A
-70 -125
V IC=-10mA*
-7.5 -8.5
V IE=-100â®A
-25 nA VCB=-55V
-25 nA VEB=-6V
-25 nA VCE=-55V
-35
-135
-140
-175
-50
-200
-220
-260
mV IC=-0.1A, IB=-10mA*
mV IC=-0.5A, IB=-20mA*
mV IC=-1A, IB=-100mA*
mV IC=-1.5A, IB=-200mA*
-0.94 -1.05 V IC=-1.5A, IB=-200mA*
-0.78 -1.00 V IC=-1.5A, VCE=-5V*
300 470
300 450
175 275
40
60
10
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-1.5A, VCE=-5V*
IC=-3A, VCE=-5V*
150 180
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
14
20
pF VCB=-10A, f=1MHz
40
ns VCC=-50V, IC=-1A
700
ns IB1=IB2=-50mA
*Measured under pulsed conditions. Pulse width=300â®s. Duty cycle Õ
2%
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2003
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