ZXT13P40DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

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Diodes Incorporated
ZXT13P40DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
BVCBO
-50
BVCEO
-40
BVEBO
-7.5
ICBO

IEBO

ICES

300
300
hFE
100
15


VCE(sat)


VBE(sat)

VBE(on)

fT

Cobo

t(on)

t(off)

Typ
-80
-70
-8.5



500
450
250
50
-16
-110
-145
-175


115
42
185
400
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max



-100
-100
-100

900


-25
-200
-190
-240
-1.1
-0.9




Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
nA V_CB = -40V
nA V_EB = -6V
nA V_CES = -40V
 IC = -10mA, VCE = -2V
 IC = -1A, VCE = -2V
 IC = -3A, VCE = -2V
 IC = -5A, VCE = -2V
IC = -100mA, IB = -10mA
mV ^{IC = -1A, IB = -20mA}
IC = -2A, IB = -100mA
IC = -3A, IB = -300mA
V I_C = -3A, I_B = -300mA
V I_C = -3A, V_CE = -2V
MHz
pF
ns
ns
VCE = -10V, IC = -50mA, f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -1A
IB1 = IB2 = -20mA
ZXT13P40DE6
Document Number: DS33639 Rev: 5 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated